IXTP1N100P دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IXT(A,P)1N100
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حجم فایل
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597.276
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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Manufacturer:
IXYS
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Series:
-
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Packaging:
Tube
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Part Status:
Not For New Designs
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1000V
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Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
11Ohm @ 1A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 25µA
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Gate Charge (Qg) (Max) @ Vgs:
14.5nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
54W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
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Package / Case:
TO-220-3
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detail:
N-Channel 1000V 1.5A (Tc) 54W (Tc) Through Hole TO-220AB
