IXTK120N65X2 دیتاشیت

IXTK120N65X2

مشخصات دیتاشیت

نام دیتاشیت IXTK120N65X2
حجم فایل 74.432 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت IXTK120N65X2

دانلود دیتاشیت

سایر مستندات

IXT(K,X)120N65X2 6 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTK120N65X2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1250W
  • Total Gate Charge (Qg@Vgs): 240nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 13600pF@25V
  • Continuous Drain Current (Id): 120A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@8mA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@60A,10V
  • Package: TO-264-3
  • Manufacturer: IXYS
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
  • detail: N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole TO-264 (IXTK)

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