دیتاشیت IXTQ36N50P

IXT(H,Q,T,V)36N50P(S)

مشخصات دیتاشیت

نام دیتاشیت IXT(H,Q,T,V)36N50P(S)
حجم فایل 411.886 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXT(H,Q,T,V)36N50P(S)

IXT(H,Q,T,V)36N50P(S) Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTQ36N50P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 540W
  • Total Gate Charge (Qg@Vgs): 85nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 5500pF@25V
  • Continuous Drain Current (Id): 36A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 170mΩ@10V,18A
  • Package: TO-3P
  • Manufacturer: IXYS
  • Series: PolarHV™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
  • detail: N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P

دیتاشیت محصولات مشابه