IXFH20N85X دیتاشیت

IXFx20N85X

مشخصات دیتاشیت

نام دیتاشیت IXFx20N85X
حجم فایل 232.379 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت IXFx20N85X

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: IXYS IXFH20N85X
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 540W
  • Total Gate Charge (Qg@Vgs): 63nC@10V
  • Drain Source Voltage (Vdss): 850V
  • Input Capacitance (Ciss@Vds): 1660pF@25V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@2.5mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 330mΩ@10V,10A
  • Package: TO-247-3
  • Manufacturer: IXYS
  • Series: HiPerFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • detail: N-Channel 850V 20A (Tc) 540W (Tc) Through Hole TO-247

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