IXFH40N85X دیتاشیت

IXFH40N85X

مشخصات دیتاشیت

نام دیتاشیت IXFH40N85X
حجم فایل 77.383 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت IXFH40N85X

دانلود دیتاشیت

سایر مستندات

IXFT40N85XHV, IXFH40N85X 7 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFH40N85X
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 860W
  • Total Gate Charge (Qg@Vgs): 98nC@10V
  • Drain Source Voltage (Vdss): 850V
  • Input Capacitance (Ciss@Vds): 3700pF@25V
  • Continuous Drain Current (Id): 40A
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@4mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 145mΩ@10V,20A
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: HiPerFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 860W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • detail: N-Channel 850V 40A (Tc) 860W (Tc) Through Hole TO-247

محصولات مشابه