IXFP5N50P3 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IXFx5N50P3
|
|
حجم فایل
|
338.575
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
7
|
مشخصات فنی
-
Manufacturer:
IXYS
-
Series:
HiPerFET™, Polar3™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
1.65Ohm @ 2.5A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
6.9nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
370pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
114W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220AB
-
Package / Case:
TO-220-3
-
detail:
N-Channel 500V 5A (Tc) 114W (Tc) Through Hole TO-220AB