IXTY4N65X2 دیتاشیت

IXTY4N65X2

مشخصات دیتاشیت

نام دیتاشیت IXTY4N65X2
حجم فایل 76.024 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXTY4N65X2

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سایر مستندات

650V Ultra Junction X2-Class POWER MOSFETs 2 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTY4N65X2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 80W
  • Total Gate Charge (Qg@Vgs): 8.3nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 455pF@25V
  • Continuous Drain Current (Id): 4A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 850mΩ@10V,2A
  • Package: TO-252
  • Manufacturer: IXYS
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • detail: N-Channel 650V 4A (Tc) 80W (Tc) Surface Mount TO-252

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