IXGQ85N33PCD1 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IXGQ85N33PCD1
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حجم فایل
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66.741
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Littelfuse/IXYS IXGQ85N33PCD1
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
85A
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Power Dissipation (Pd):
150W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
-
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Total Gate Charge (Qg@Ic,Vge):
80nC
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Diode Reverse Recovery Time (Trr):
250ns
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Collector-Emitter Breakdown Voltage (Vces):
330V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3V@15V,100A
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Package:
TO-3P-3
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Manufacturer:
IXYS
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Series:
Polar™
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
330V
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Current - Collector (Ic) (Max):
85A
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Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 100A
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Power - Max:
150W
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Switching Energy:
-
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Input Type:
Standard
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Gate Charge:
80nC
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Td (on/off) @ 25°C:
-
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Test Condition:
-
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Reverse Recovery Time (trr):
250ns
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Mounting Type:
Through Hole
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Package / Case:
TO-3P-3, SC-65-3
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Supplier Device Package:
TO-3P
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detail:
IGBT 330V 85A 150W Through Hole TO-3P
