IXFP10N60P دیتاشیت

IXFP10N60P

مشخصات دیتاشیت

نام دیتاشیت IXFP10N60P
حجم فایل 73.857 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت IXFP10N60P

دانلود دیتاشیت

سایر مستندات

IXF(A,P)10N60P 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFP10N60P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 200W
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Input Capacitance (Ciss@Vds): 1610pF@25V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 740mΩ@5A,10V
  • Package: TO-220
  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarP2™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • detail: N-Channel 600V 10A (Tc) 200W (Tc) Through Hole TO-220AB

محصولات مشابه