IXFP12N65X2M دیتاشیت

IXFP12N65X2M Preliminary~

مشخصات دیتاشیت

نام دیتاشیت IXFP12N65X2M Preliminary~
حجم فایل 582.7 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت IXFP12N65X2M Preliminary~

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 40W
  • Total Gate Charge (Qg@Vgs): 18.5nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1134pF@25V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 310mΩ@10V,6A
  • Package: TO-220
  • Manufacturer: IXYS
  • Series: HiPerFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1134pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • detail: N-Channel 650V 12A (Tc) 40W (Tc) Through Hole TO-220 Isolated Tab

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