دیتاشیت IXTP56N15T

IXT(A,P)56N15T

مشخصات دیتاشیت

نام دیتاشیت IXT(A,P)56N15T
حجم فایل 137.771 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت IXT(A,P)56N15T

IXT(A,P)56N15T Datasheet

مشخصات

  • Manufacturer: IXYS
  • Series: TrenchHV™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • detail: N-Channel 150V 56A (Tc) 300W (Tc) Through Hole TO-220AB

دیتاشیت محصولات مشابه