IXF(A,H,P)22N65X2 دیتاشیت

IXF(A,H,P)22N65X2

مشخصات دیتاشیت

نام دیتاشیت IXF(A,H,P)22N65X2
حجم فایل 344.232 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت IXF(A,H,P)22N65X2

دانلود دیتاشیت

سایر مستندات

IXFA22N65X2 7 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFH22N65X2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 390W
  • Total Gate Charge (Qg@Vgs): 38nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 2310pF@25V
  • Continuous Drain Current (Id): 22A
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@1.5mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10V,11A
  • Package: TO-247-3
  • Manufacturer: IXYS
  • Series: HiPerFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • detail: N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-247

محصولات مشابه