IXK(H,P)20N60C5 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IXK(H,P)20N60C5
|
|
حجم فایل
|
157.129
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
5
|
مشخصات فنی
-
Manufacturer:
IXYS
-
Series:
CoolMOS™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
600V
-
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
200mOhm @ 10A, 10V
-
Vgs(th) (Max) @ Id:
3.5V @ 1.1mA
-
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1520pF @ 100V
-
FET Feature:
-
-
Power Dissipation (Max):
-
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247AD (IXKH)
-
Package / Case:
TO-3P-3 Full Pack
-
detail:
N-Channel 600V 20A (Tc) Through Hole TO-247AD (IXKH)