دیتاشیت IXTQ30N50P
مشخصات دیتاشیت
| نام دیتاشیت | IXT(H,Q,T,V)30N50P(S) |
|---|---|
| حجم فایل | 386.471 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت IXT(H,Q,T,V)30N50P(S) |
IXT(H,Q,T,V)30N50P(S) Datasheet |
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مشخصات
- Manufacturer: IXYS
- Series: PolarHV™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
- detail: N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-3P
