IXXH75N60C3D1 دیتاشیت

IXXH75N60C3D1

مشخصات دیتاشیت

نام دیتاشیت IXXH75N60C3D1
حجم فایل 76.276 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

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IXXH75N60C3D1 8 pages

مشخصات فنی

  • RoHS: true
  • Type: PT
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: Littelfuse/IXYS IXXH75N60C3D1
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 150A
  • Power Dissipation (Pd): 750W
  • Turn?on Delay Time (Td(on)): 35ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 1.6mJ
  • Total Gate Charge (Qg@Ic,Vge): 107nC
  • Turn?off Delay Time (Td(off)): 90ns
  • Pulsed Collector Current (Icm): 300A
  • Turn?off Switching Loss (Eoff): 0.8mJ
  • Diode Reverse Recovery Time (Trr): 25ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.3V@15V,60A
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: GenX3™, XPT™
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750W
  • Switching Energy: 1.6mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 107nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • detail: IGBT PT 600V 150A 750W Through Hole TO-247AD

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