IXFA3N120-TRL دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IXFA3N120, IXFP3N120
|
|
حجم فایل
|
627.638
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
5
|
مشخصات فنی
-
Manufacturer:
IXYS
-
Series:
HiPerFET™
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
1200V
-
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 1.5A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 1.5mA
-
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1050pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
200W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
TO-263
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
detail:
N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263
