IXTQ100N25P دیتاشیت

IXTQ100N25P

مشخصات دیتاشیت

نام دیتاشیت IXTQ100N25P
حجم فایل 74.862 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXTQ100N25P

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سایر مستندات

IXT(K,Q,T)100N25P 6 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTQ100N25P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 600W
  • Total Gate Charge (Qg@Vgs): 185nC@10V
  • Drain Source Voltage (Vdss): 250V
  • Input Capacitance (Ciss@Vds): 6300pF@25V
  • Continuous Drain Current (Id): 100A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@50A,10V
  • Package: TO-3P-3
  • Manufacturer: IXYS
  • Series: PolarHT™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
  • detail: N-Channel 250V 100A (Tc) 600W (Tc) Through Hole TO-3P

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