IXXN200N60C3H1 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IXXN200N60C3H1
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حجم فایل
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84.621
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
PT
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Littelfuse/IXYS IXXN200N60C3H1
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
200A
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Power Dissipation (Pd):
780W
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Input Capacitance (Cies@Vce):
9.9nF@25V
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Collector Cut-Off Current (Ices@Vce):
50uA
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Collector-Emitter Breakdown Voltage (Vces):
600V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.1V@15V,100A
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Package:
SOT-227
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Manufacturer:
IXYS
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Series:
XPT™, GenX3™
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
PT
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Configuration:
Single
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
200A
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Power - Max:
780W
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Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 100A
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Current - Collector Cutoff (Max):
50µA
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Input Capacitance (Cies) @ Vce:
9.9nF @ 25V
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Input:
Standard
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NTC Thermistor:
No
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Mounting Type:
Chassis Mount
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Package / Case:
SOT-227-4, miniBLOC
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Supplier Device Package:
SOT-227B
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detail:
IGBT Module PT Single 600V 200A 780W Chassis Mount SOT-227B
