IXTN120P20T دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IXTN120P20T
|
|
حجم فایل
|
187.537
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
7
|
مشخصات فنی
-
Manufacturer:
IXYS
-
Series:
TrenchP™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
200V
-
Current - Continuous Drain (Id) @ 25°C:
106A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
30mOhm @ 60A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
740nC @ 10V
-
Vgs (Max):
±15V
-
Input Capacitance (Ciss) (Max) @ Vds:
73000pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
830W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Chassis Mount
-
Supplier Device Package:
SOT-227B
-
Package / Case:
SOT-227-4, miniBLOC
-
detail:
P-Channel 200V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B
