دیتاشیت IXFK180N10
مشخصات دیتاشیت
| نام دیتاشیت |
IXF(K,X)180N10
|
| حجم فایل |
156.134
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
HiPerFET™
-
Packaging:
Tube
-
Part Status:
Not For New Designs
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
8mOhm @ 90A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 8mA
-
Gate Charge (Qg) (Max) @ Vgs:
390nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
10900pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
560W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-264AA (IXFK)
-
Package / Case:
TO-264-3, TO-264AA
-
detail:
N-Channel 100V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)
