دیتاشیت VMO650-01F
مشخصات دیتاشیت
نام دیتاشیت |
VMO650-01F
|
حجم فایل |
47.739
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
2
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
HiPerFET™
-
Packaging:
Bulk
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
690A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 500mA, 10V
-
Vgs(th) (Max) @ Id:
6V @ 130mA
-
Gate Charge (Qg) (Max) @ Vgs:
2300nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
59000pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
2500W (Tc)
-
Operating Temperature:
-40°C ~ 150°C (TJ)
-
Mounting Type:
Chassis Mount
-
Supplier Device Package:
Y3-DCB
-
Package / Case:
Y3-DCB
-
Base Part Number:
VMO
-
detail:
N-Channel 100V 690A (Tc) 2500W (Tc) Chassis Mount Y3-DCB