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IXFH16N90Q Datasheet
Datasheet specifications
| Datasheet's name | IXF(H,K,T)16N90Q |
|---|---|
| File size | 207.948 KB |
| File type | |
| Number of pages | 3 |
Download Datasheet IXF(H,K,T)16N90Q |
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Other documentations
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Technical specifications
- Manufacturer: IXYS
- Series: HiPerFET™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
- detail: N-Channel 900V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)