VWM200-01P 数据手册
其他文档
未找到其他文档!
技术规格
- Manufacturer: IXYS
- Series: -
- Packaging: Bulk
- Part Status: Obsolete
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 210A
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
- detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK
