دیتاشیت VWM200-01P
مشخصات دیتاشیت
| نام دیتاشیت |
VWM200-01P
|
| حجم فایل |
206.399
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
2
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Obsolete
-
FET Type:
6 N-Channel (3-Phase Bridge)
-
FET Feature:
Standard
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
210A
-
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 100A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 2mA
-
Gate Charge (Qg) (Max) @ Vgs:
430nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds:
-
-
Power - Max:
-
-
Operating Temperature:
-40°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
V2-PAK
-
Supplier Device Package:
V2-PAK
-
detail:
Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK
