CSD88539ND دیتاشیت

CSD88539ND

مشخصات دیتاشیت

نام دیتاشیت CSD88539ND
حجم فایل 80.817 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت CSD88539ND

دانلود دیتاشیت

سایر مستندات

CSD88539ND 13 pages

مشخصات فنی

  • RoHS: true
  • Type: 2 N-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD88539ND
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.1W
  • Total Gate Charge (Qg@Vgs): 9.4nC@10V
  • Input Capacitance (Ciss@Vds): 741pF@30V
  • Continuous Drain Current (Id): 15A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.6V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@5A,10V
  • Package: SOP-8
  • Manufacturer: Texas Instruments
  • Drain to Source Voltage (Vdss): 60V
  • Power - Max: 2.1W
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
  • FET Type: 2 N-Channel (Dual)
  • Part Status: Active
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • FET Feature: Standard
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
  • Packaging: Cut Tape (CT)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Supplier Device Package: 8-SOIC
  • Mounting Type: Surface Mount
  • Base Part Number: CSD88539
  • detail: Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC

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