STL8P4LLF6 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STL8P4LLF6
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حجم فایل
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59.984
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STL8P4LLF6
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Power Dissipation (Pd):
2.9W
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Drain Source Voltage (Vdss):
40V
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Continuous Drain Current (Id):
-
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Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
20.5mΩ@10V,4A
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Package:
PowerFLAT(3.3x3.3)
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Manufacturer:
STMicroelectronics
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Series:
STripFET™ F6
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
-
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
20.5mOhm @ 4A, 10V
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Vgs(th) (Max) @ Id:
2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
2850pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
2.9W (Ta)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
PowerFlat™ (3.3x3.3)
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Package / Case:
8-PowerVDFN
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Base Part Number:
STL8
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detail:
P-Channel 40V 2.9W (Ta) Surface Mount PowerFlat™ (3.3x3.3)
