CSD25310Q2 دیتاشیت

CSD25310Q2

مشخصات دیتاشیت

نام دیتاشیت CSD25310Q2
حجم فایل 92.137 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت CSD25310Q2

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سایر مستندات

CSD25310Q2 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD25310Q2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.9W
  • Total Gate Charge (Qg@Vgs): 3.6nC@4.5V
  • Drain Source Voltage (Vdss): 20V
  • Input Capacitance (Ciss@Vds): 504pF@10V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 16.7pF@10V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19.9mΩ@4.5V,5A
  • Package: WSON-6
  • Manufacturer: Texas Instruments
  • Packaging: Cut Tape (CT)
  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 20V
  • Technology: MOSFET (Metal Oxide)
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Base Part Number: CSD2531
  • Package / Case: 6-WDFN Exposed Pad
  • Series: NexFET™
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
  • Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
  • FET Feature: -
  • Supplier Device Package: 6-WSON (2x2)
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Part Status: Active
  • Mounting Type: Surface Mount
  • Power Dissipation (Max): 2.9W (Ta)
  • detail: P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)

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