CSD87331Q3D دیتاشیت

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مشاهده دیتاشیت CSD87331Q3D	دانلود دیتاشیت

RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD87331Q3D
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: LSON-8(3.3x3.3)
Manufacturer: Texas Instruments
Input Capacitance (Ciss) (Max) @ Vds: 518pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-LSON (5x6)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Base Part Number: CSD87331
Vgs(th) (Max) @ Id: 2.1V, 1.2V @ 250µA
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Package / Case: 8-PowerLDFN
Part Status: Active
Series: NexFET™
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: -
Current - Continuous Drain (Id) @ 25°C: 15A
Power - Max: 6W
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 15A 6W Surface Mount 8-LSON (5x6)