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- دیتاشیت STD18N55M5
STD18N55M5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STD18N55M5 |
|---|---|
| حجم فایل | 72.598 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 24 |
دانلود دیتاشیت STD18N55M5 |
دانلود دیتاشیت |
|---|
سایر مستندات
STB,D,F,P18N55M5 23 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD18N55M5
- Power Dissipation (Pd): 110W
- Total Gate Charge (Qg@Vgs): 31nC@10V
- Drain Source Voltage (Vdss): 550V
- Input Capacitance (Ciss@Vds): 1260pF@100V
- Continuous Drain Current (Id): 16A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 192mΩ@10V,8A
- Package: TO-252-2(DPAK)
- Manufacturer: STMicroelectronics
- Series: MDmesh™ V
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: STD18
- detail: N-Channel 550V 16A (Tc) 110W (Tc) Surface Mount DPAK