CSD87333Q3D دیتاشیت

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مشاهده دیتاشیت CSD87333Q3D	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD87333Q3D
Power Dissipation (Pd): 6W
Total Gate Charge (Qg@Vgs): 4.6nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 662pF@15V
Continuous Drain Current (Id): 15A
Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 14.3mΩ@8V,4A
Package: VSON-8(3.3x3.3)
Manufacturer: Texas Instruments
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Operating Temperature: 125°C (TJ)
Supplier Device Package: 8-VSON (3.3x3.3)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Base Part Number: CSD87333
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 5V Drive
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Current - Continuous Drain (Id) @ 25°C: 15A
Power - Max: 6W
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 15A 6W Surface Mount 8-VSON (3.3x3.3)