STx3N150 数据手册
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STW3N150 23 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STH3N150-2
- Power Dissipation (Pd): 140W
- Total Gate Charge (Qg@Vgs): 29.3nC@10V
- Drain Source Voltage (Vdss): 1.5kV
- Input Capacitance (Ciss@Vds): 939pF@25V
- Continuous Drain Current (Id): 2.5A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9Ω@10V,1.3A
- Package: H2PAK-2
- Manufacturer: STMicroelectronics
- Series: PowerMESH™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
- Base Part Number: STH3N
- detail: N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK