Power Management Guide دیتاشیت

Power Management Guide

مشخصات دیتاشیت

نام دیتاشیت Power Management Guide
حجم فایل 6420.273 کیلوبایت
نوع فایل pdf
تعداد صفحات 93

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سایر مستندات

CSD16327Q3 Datasheet 13 pages

CSD16327Q3 14 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD16327Q3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 3W
  • Total Gate Charge (Qg@Vgs): 8.4nC@4.5V
  • Drain Source Voltage (Vdss): 25V
  • Input Capacitance (Ciss@Vds): 1300pF@12.5V
  • Continuous Drain Current (Id): 60A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@24A,8V
  • Package: VSON-CLIP-8(3.3x3.3)
  • Manufacturer: Texas Instruments
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Series: NexFET™
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
  • Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
  • Vgs (Max): +10V, -8V
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Packaging: Cut Tape (CT)
  • Power Dissipation (Max): 3W (Ta)
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Base Part Number: CSD1632
  • FET Type: N-Channel
  • Package / Case: 8-PowerTDFN
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V
  • Part Status: Active
  • detail: N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

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