CSD19537Q3T دیتاشیت

CSD19537Q3T

مشخصات دیتاشیت

نام دیتاشیت CSD19537Q3T
حجم فایل 82.38 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD19537Q3T

دانلود دیتاشیت

سایر مستندات

CSD19537Q3 13 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD19537Q3T
  • Power Dissipation (Pd): 2.8W
  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 50A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.6V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14.5mΩ@10V,10A
  • Package: VSONP-8(3.3x3.3)
  • Manufacturer: Texas Instruments
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 50V
  • Package / Case: 8-PowerVDFN
  • Vgs (Max): ±20V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Packaging: Cut Tape (CT)
  • Supplier Device Package: 8-VSON (3.3x3.3)
  • Part Status: Active
  • Base Part Number: CSD19537
  • Series: NexFET™
  • Mounting Type: Surface Mount
  • FET Type: N-Channel
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Technology: MOSFET (Metal Oxide)
  • Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
  • detail: N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)

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