CSD16325Q5 دیتاشیت

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RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD16325Q5
Power Dissipation (Pd): 3.1W
Drain Source Voltage (Vdss): 25V
Continuous Drain Current (Id): 33A
Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@8V,30A
Package: VSON-CLIP-8(6x5)
Manufacturer: Texas Instruments
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 12.5V
Package / Case: 8-PowerTDFN
Vgs (Max): +10V, -8V
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Packaging: Cut Tape (CT)
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Base Part Number: CSD1632
Series: NexFET™
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 8V
detail: N-Channel 25V 33A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)