CSD18502Q5B Datasheet دیتاشیت

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مشاهده دیتاشیت CSD18502Q5B Datasheet	دانلود دیتاشیت

RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD18502Q5B
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: VSON-CLIP-8(6x5)
Manufacturer: Texas Instruments
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 20V
Package / Case: 8-PowerTDFN
Vgs (Max): ±20V
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Packaging: Cut Tape (CT)
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Base Part Number: CSD18502
Series: NexFET™
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
detail: N-Channel 40V 26A (Ta), 100A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6)