CSD19532Q5B دیتاشیت

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RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD19532Q5B
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: SON-8(6x5)
Manufacturer: Texas Instruments
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 50V
Package / Case: 8-PowerTDFN
Vgs (Max): ±20V
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Packaging: Cut Tape (CT)
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Base Part Number: CSD19532
Series: NexFET™
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
detail: N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)