CSD86360Q5D دیتاشیت

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مشاهده دیتاشیت CSD86360Q5D	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD86360Q5D
Power Dissipation (Pd): 13W
Drain Source Voltage (Vdss): 25V
Continuous Drain Current (Id): 50A
Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: LSON-8(6x5)
Manufacturer: Texas Instruments
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
Package / Case: 8-PowerLDFN
Series: NexFET™
Drain to Source Voltage (Vdss): 25V
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A
Packaging: Cut Tape (CT)
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
Base Part Number: CSD86360
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 13W
Rds On (Max) @ Id, Vgs: -
detail: Mosfet Array 2 N-Channel (Half Bridge) 25V 50A 13W Surface Mount 8-LSON (5x6)