CSD18536KCS دیتاشیت

CSD18536KCS

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نام دیتاشیت CSD18536KCS
حجم فایل 82.463 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

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CSD18536KCS 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD18536KCS
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 375W
  • Total Gate Charge (Qg@Vgs): 108nC@10V
  • Input Capacitance (Ciss@Vds): 11430pF@30V
  • Continuous Drain Current (Id): 200A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@100A,10V
  • Package: TO-220
  • Manufacturer: Texas Instruments
  • Part Status: Active
  • Power Dissipation (Max): 375W (Tc)
  • Package / Case: TO-220-3
  • Drain to Source Voltage (Vdss): 60V
  • Base Part Number: CSD1853
  • Technology: MOSFET (Metal Oxide)
  • Series: NexFET™
  • Mounting Type: Through Hole
  • Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11430pF @ 30V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Vgs (Max): ±20V
  • Packaging: Tube
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • FET Feature: -
  • detail: N-Channel 60V 200A (Ta) 375W (Tc) Through Hole TO-220-3

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