STL7N60M2 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت STL7N60M2	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: STMicroelectronics STL7N60M2
Power Dissipation (Pd): 4W
Drain Source Voltage (Vdss): 600V
Continuous Drain Current (Id): 5A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.05Ω@10V,2A
Package: PowerFLAT-12(5x5)
Manufacturer: STMicroelectronics
Series: MDmesh™
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 100V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 67W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFLAT™ (5x5)
Package / Case: 8-PowerVDFN
Base Part Number: STL7
detail: N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)