STP55NF06L دیتاشیت

STP55NF06L

مشخصات دیتاشیت

نام دیتاشیت STP55NF06L
حجم فایل 63.563 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت STP55NF06L

دانلود دیتاشیت

سایر مستندات

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP55NF06L
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 95W
  • Total Gate Charge (Qg@Vgs): 37nC@4.5V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 1700pF@25V
  • Continuous Drain Current (Id): 55A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,27.5A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP55N
  • detail: N-Channel 60V 55A (Tc) 95W (Tc) Through Hole TO-220AB

محصولات مشابه