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- دیتاشیت STD1NK60T4
STD1NK60T4 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STD1NK60T4 |
|---|---|
| حجم فایل | 59.264 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 19 |
دانلود دیتاشیت STD1NK60T4 |
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سایر مستندات
STx1(H)NK60(-1,R) 16 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD1NK60T4
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 30W
- Total Gate Charge (Qg@Vgs): 10nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 156pF@25V
- Continuous Drain Current (Id): 1A
- Gate Threshold Voltage (Vgs(th)@Id): 3.7V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5Ω@10V,500mA
- Package: TO-252
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: STD1NK
- detail: N-Channel 600V 1A (Tc) 30W (Tc) Surface Mount DPAK