STW3N170 دیتاشیت

STW3N170

مشخصات دیتاشیت

نام دیتاشیت STW3N170
حجم فایل 60.31 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت STW3N170

دانلود دیتاشیت

سایر مستندات

مستندات دیگری یافت نشد!

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW3N170
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 160mW
  • Total Gate Charge (Qg@Vgs): 44nC@10V
  • Drain Source Voltage (Vdss): 1700V
  • Input Capacitance (Ciss@Vds): 1100pF@100V
  • Continuous Drain Current (Id): 2.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13Ω@1.3A,10V
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: PowerMESH™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 160mW
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: STW3N
  • detail: N-Channel 1700V 2.6A (Tc) 160mW Through Hole TO-247-3

محصولات مشابه