STW20NM60FD دیتاشیت

STW20NM60FD

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نام دیتاشیت STW20NM60FD
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تعداد صفحات 15

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW20NM60FD
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Power Dissipation (Pd): 214W
  • Total Gate Charge (Qg@Vgs): 37nC@10V
  • Input Capacitance (Ciss@Vds): 1300pF@25V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 290mΩ@10A,10V
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: FDmesh™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: STW20N
  • detail: N-Channel 600V 20A (Tc) 214W (Tc) Through Hole TO-247-3

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