STW26NM60N دیتاشیت

STW26NM60N

مشخصات دیتاشیت

نام دیتاشیت STW26NM60N
حجم فایل 58.545 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت STW26NM60N

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سایر مستندات

STW26NM60N 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW26NM60N
  • Power Dissipation (Pd): 140W
  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 165mΩ@10V,10A
  • Package: TO-247AC-3
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: STW26N
  • detail: N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3

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