دیتاشیت STQ2HNK60ZR-AP

STx2HNK60Z(x)

مشخصات دیتاشیت

نام دیتاشیت STx2HNK60Z(x)
حجم فایل 847.768 کیلوبایت
نوع فایل pdf
تعداد صفحات 29

دانلود دیتاشیت STx2HNK60Z(x)

STx2HNK60Z(x) Datasheet

مشخصات

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Base Part Number: STQ2
  • detail: N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3

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