دیتاشیت STD5NK40Z-1
مشخصات دیتاشیت
نام دیتاشیت | ST(D,P)5NK40Z(FP,-1) |
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حجم فایل | 617.013 کیلوبایت |
نوع فایل | |
تعداد صفحات | 14 |
دانلود دیتاشیت ST(D,P)5NK40Z(FP,-1) |
ST(D,P)5NK40Z(FP,-1) Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD5NK40Z-1
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 45W
- Total Gate Charge (Qg@Vgs): 17nC@10V
- Drain Source Voltage (Vdss): 400V
- Input Capacitance (Ciss@Vds): 305pF@25V
- Continuous Drain Current (Id): 3A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8Ω@1.5A,10V
- Package: IPAK
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number: STD5N
- detail: N-Channel 400V 3A (Tc) 45W (Tc) Through Hole I-PAK