دیتاشیت STD5N52U
								
							
							
								
								
									
										مشخصات دیتاشیت
										
											
												
													| نام دیتاشیت | 
													
														ST(D,F)5N52U
													 | 
												
												
													| حجم فایل | 
													
														
															995.534
																کیلوبایت
														 | 
														
												
												
													| نوع فایل | 
													
														
															pdf
														 | 
														
												
												
													| تعداد صفحات | 
													
														
															19
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مشخصات
					
					
						
							
									
										
											- 
												
													RoHS:
												
												
													true
												
											
 
											
											- 
												
													Type:
												
												
													N Channel
												
											
 
											
											- 
												
													Category:
												
												
													Triode/MOS Tube/Transistor/MOSFETs
												
											
 
											
											- 
												
													Datasheet:
												
												
													STMicroelectronics STD5N52U
												
											
 
											
											- 
												
													Operating Temperature:
												
												
													-55°C~+150°C@(Tj)
												
											
 
											
											- 
												
													Power Dissipation (Pd):
												
												
													70W
												
											
 
											
											- 
												
													Total Gate Charge (Qg@Vgs):
												
												
													16.9nC@10V
												
											
 
											
											- 
												
													Drain Source Voltage (Vdss):
												
												
													525V
												
											
 
											
											- 
												
													Input Capacitance (Ciss@Vds):
												
												
													529pF@25V
												
											
 
											
											- 
												
													Continuous Drain Current (Id):
												
												
													4.4A
												
											
 
											
											- 
												
													Gate Threshold Voltage (Vgs(th)@Id):
												
												
													4.5V@50uA
												
											
 
											
											- 
												
													Drain Source On Resistance (RDS(on)@Vgs,Id):
												
												
													1.5Ω@10V,2.2A
												
											
 
											
											- 
												
													Package:
												
												
													TO-252
												
											
 
											
											- 
												
													Manufacturer:
												
												
													STMicroelectronics
												
											
 
											
											- 
												
													Series:
												
												
													UltraFASTmesh™
												
											
 
											
											- 
												
													Packaging:
												
												
													Cut Tape (CT)
												
											
 
											
											- 
												
													Part Status:
												
												
													Active
												
											
 
											
											- 
												
													FET Type:
												
												
													N-Channel
												
											
 
											
											- 
												
													Technology:
												
												
													MOSFET (Metal Oxide)
												
											
 
											
											- 
												
													Drain to Source Voltage (Vdss):
												
												
													525V
												
											
 
											
											- 
												
													Current - Continuous Drain (Id) @ 25°C:
												
												
													4.4A (Tc)
												
											
 
											
											- 
												
													Drive Voltage (Max Rds On,  Min Rds On):
												
												
													10V
												
											
 
											
											- 
												
													Rds On (Max) @ Id, Vgs:
												
												
													1.5Ohm @ 2.2A, 10V
												
											
 
											
											- 
												
													Vgs(th) (Max) @ Id:
												
												
													4.5V @ 50µA
												
											
 
											
											- 
												
													Gate Charge (Qg) (Max) @ Vgs:
												
												
													16.9nC @ 10V
												
											
 
											
											- 
												
													Vgs (Max):
												
												
													±30V
												
											
 
											
											- 
												
													Input Capacitance (Ciss) (Max) @ Vds:
												
												
													529pF @ 25V
												
											
 
											
											- 
												
													FET Feature:
												
												
													-
												
											
 
											
											- 
												
													Power Dissipation (Max):
												
												
													70W (Tc)
												
											
 
											
											- 
												
													Mounting Type:
												
												
													Surface Mount
												
											
 
											
											- 
												
													Supplier Device Package:
												
												
													DPAK
												
											
 
											
											- 
												
													Package / Case:
												
												
													TO-252-3, DPak (2 Leads + Tab), SC-63
												
											
 
											
											- 
												
													Base Part Number:
												
												
													STD5N
												
											
 
											
											- 
												
													detail:
												
												
													N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount DPAK