STGB6NC60HDT4 دیتاشیت

STGB6NC60HDT4

مشخصات دیتاشیت

نام دیتاشیت STGB6NC60HDT4
حجم فایل 46.823 کیلوبایت
نوع فایل pdf
تعداد صفحات 24

مشاهده دیتاشیت STGB6NC60HDT4-Isee

دانلود دیتاشیت

سایر مستندات

STGx6NC60HD(-1) 24 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGB6NC60HDT4
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 15A
  • Power Dissipation (Pd): 56W
  • Turn?on Delay Time (Td(on)): 12ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.02mJ
  • Total Gate Charge (Qg@Ic,Vge): 13.6nC
  • Turn?off Delay Time (Td(off)): 76ns
  • Pulsed Collector Current (Icm): 21A
  • Turn?off Switching Loss (Eoff): 0.068mJ
  • Diode Reverse Recovery Time (Trr): 21ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,3A
  • Package: D2PAK
  • Manufacturer: STMicroelectronics
  • Series: PowerMESH™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 21ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Base Part Number: STGB6
  • detail: IGBT 600V 15A 56W Surface Mount D2PAK

محصولات مشابه