STP36N60M6, STW36N60M6 دیتاشیت

STP36N60M6, STW36N60M6

مشخصات دیتاشیت

نام دیتاشیت STP36N60M6, STW36N60M6
حجم فایل 425.822 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STP36N60M6, STW36N60M6

دانلود دیتاشیت

سایر مستندات

STW36N60M6 16 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP36N60M6
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 208W
  • Total Gate Charge (Qg@Vgs): 44.3nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 1960pF@100V
  • Continuous Drain Current (Id): 30A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.75V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 6pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 85mΩ@10V,15A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ M6
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.3nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP36N
  • detail: N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220

محصولات مشابه