STU2N80K5 دیتاشیت

STU2N80K5

مشخصات دیتاشیت

نام دیتاشیت STU2N80K5
حجم فایل 67.287 کیلوبایت
نوع فایل pdf
تعداد صفحات 22

مشاهده دیتاشیت STU2N80K5

دانلود دیتاشیت

سایر مستندات

STx2N80K5 22 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STU2N80K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 45W
  • Total Gate Charge (Qg@Vgs): 9.5nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 105pF@100V
  • Continuous Drain Current (Id): 2A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5Ω@10V,1A
  • Package: TO-251
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH5™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: STU2N
  • detail: N-Channel 800V 2A (Tc) 45W (Tc) Through Hole IPAK (TO-251)

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