STP2NK90Z دیتاشیت

STP2NK90Z

مشخصات دیتاشیت

نام دیتاشیت STP2NK90Z
حجم فایل 70.117 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STP2NK90Z

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP2NK90Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 70W
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Drain Source Voltage (Vdss): 900V
  • Input Capacitance (Ciss@Vds): 485pF@25V
  • Continuous Drain Current (Id): 2.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5Ω@10V,1.05A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.05A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP2N
  • detail: N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole TO-220AB

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